高速光组件PLC芯片

技术规格-额定参数

PARAMETER	SYMBOL	RATING	UNIT
Output power	PO	30	mW
LD forward current	IF	200	mA
LD reverse voltage	VRLD	2	V
Operating temperature	Tc	-40 to 95	°C
Storage temperature	Tstg	-40 to 85	°C
Soldering Temperature (<1.5s)	Tsld	390	C

技术规格-光学参数和电学参数

Parameter	Symbol	Test condition		Min.	Typ.	Max.	Unit
Threshold current	Ith	CW	25°C	-	8	-	mA
			95°C	-	10	20
Output power	Po	CW Iop = 80 mA	25°C	-	30	-	mW
			95°C	10	18	-
Operating current	Iop	CW Po = 10 mW	25°C	-	35	-	mA
			95°C	-	42	60
Operating voltage	Vop	CW Po = 10 mW	25°C	-	1.3	1.7	V
			95°C	-	1.3	1.6
Center wavelength	c	CW Po = 10 mW	25°C	-	1305	-	nm
			95°C	-	1337	-	nm
RMS spectral width		CW Po = 10 mW	25, 95°C	-	3.0	5.0	nm
FWHM of far field pattern (Horizontal)	h	CW Po = 10 mW	25, 95°C	10	18	23	deg.
FWHM of far field pattern (Vertical)	v	CW Po = 10 mW	25, 95°C	30	44	50	deg.

量子点晶圆规格

量子点芯片提供从晶圆到芯片的多形态产品，满足客户的需求。

Item	Quantity	Test condition, specification	Go/No criteria
Die bonding (DB) and wire bondign (WB) check	1pc/wafer	DB shear strength > 0.96 N WB pull strength > 0.03 N	100%
Burn-in	10pcs/wafer	TO-CAN 100°C, 120 mA ACC, 12 hrs Ith < 10%	>= 70%
CW characteristics	10pcs/wafer	TO-CAN Based on Table 6-2	>= 70%

Table 6-2

Parameter	Symbol	Test condition		Min.	Typ.	Max.	Unit
Threshold current	Ith	CW	-40°C	-	10	20	mA
			25°C	-	8	15
			95°C	-	10	20
Output power	Po	CW Iop = 80 mA	-40°C	20	30	-	mW
			25°C	20	30	-
			95°C	10	18	-
Operating current	Iop	CW Po = 10 mW	-40°C	-	40	50	mA
			25°C	-	35	40
			95°C	-	42	60
Operating voltage	Vop	CW Po = 10 mW	-40°C	-	1.6	2.0	V
			25°C	-	1.3	1.7
			95°C	-	1.3	1.6

芯片外形图：